A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode and the grown silicon-bearing compound electrode. A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap, the nanogap having a uniform width.