Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a first oxide layer formed on a dielectric interlayer and a bottom electrode on a substrate and having a contact hole for exposing the bottom electrode formed in the first oxide layer; a spacer formed on a side surface of the contact hole; a phase-change layer formed on the spacer and the bottom electrode while forming a shape of another spacer; a second oxide layer filling in the contact hole while exposing an upper portion of the phase-change layer; and a top electrode formed on the first oxide layer while being in contact with the upper portion of the phase-change layer.