A method for removing nanoclusters from a semiconductor device includes etching a selected portion of an insulating layer, flowing a reducing gas over the semiconductor device at a temperature in a range of 400 900 degrees Celsius, and flowing a gas comprising halogen over the semiconductor device at a temperature in a range of 400 900 degrees Celsius. In another form, a method for removing the nanoclusters includes implanting germanium or nitrogen into the nanociusters, etching a selected portion of the insulating layer using a dry etch process, and removing the layer of nanoclusters using a wet etch process that is selective to an insulating layer.