An organic field effect transistor (FET) is described with an active
dielectric layer comprising a low-temperature cured dielectric film of a
liquid-deposited silsesquioxane precursor. The dielectric film comprises
a silsesquioxane having a dielectric constant of greater than 2. The
silsesquioxane dielectric film is advantageously prepared by curing
oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The
invention also embraces a process for making an organic FET comprising
providing a substrate suitable for an organic FET; applying a
liquid-phase solution of silsesquioxane precursors over the surface of
the substrate; and curing the solution to form a silsesquioxane active
dielectric layer. The organic FET thus produced has a high-dielectric,
silsesquioxane film with a dielectric constant of greater than about 2,
and advantageously, the substrate comprises an indium-tin oxide coated
plastic substrate.