III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl.sub.3 together with chemistries of CH.sub.4 and H.sub.2 in RIE and/or ICP systems. HI or IBr or some combination of group VII gaseous species (Br, F, I) may be added in accordance with the invention.

 
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> Method of removing spacers and fabricating MOS transistor

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