A thin film transistor formed by using a Metal Induced Lateral Crystallization process and method for fabricating the same. The thin film transistor comprises an active layer having source/drain regions and a channel region, a gate electrode, an insulating layer having contact holes for exposing a portion of each of the source/drain regions, and a crystallization inducing pattern exposing a portion of the active layer. The source/drain electrodes are coupled to the source/drain regions through the contact holes, and the crystallization inducing pattern does not couple the source/drain regions to the source/drain electrodes.