A method for forming device packages includes forming a perimeter with a reactive foil and a bonding material interposed between a first wafer and a second wafer, pressing the first and the second wafers against the reactive foil and the bonding material, initiating the reactive foil, wherein the reactive foil heats the bonding material to create a bond between the first and the second wafers, and singulating the first and the second wafers into the device packages.

 
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> Semiconductor package having substrate with multi-layer metal bumps

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