There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1.times.10.sup.20/cm.sup.3 to 1.times.10.sup.21/cm.sup.3 and has an amorphous structure, typically, an amorphous silicon film.