An electronic device can include a substrate having a trench that includes a wall and a bottom. The electronic device can also include a first set of discontinuous storage elements that overlie a primary surface of the substrate and a second set of discontinuous storage elements that lie within the trench. The electronic device can also include a first gate electrode, wherein substantially none of the discontinuous storage elements lies along the wall of the trench at an elevation between and upper surface of the first gate electrode and the primary surface of the substrate. The electronic device can also include a second gate electrode overlying the first gate electrode and the primary surface. In another embodiment, a conductive line can be electrically connected to one or more rows or columns of memory cells, and another conductive line can be more rows or more columns of memory cells.