Techniques are provided for manufacturing a light-emitting device having
high internal quantum efficiency, consuming less power, having high
luminance, and having high reliability. The techniques include forming a
conductive light-transmitting oxide layer comprising a conductive
light-transmitting oxide material and silicon oxide, forming a barrier
layer in which density of the silicon oxide is higher than that in the
conductive light-transmitting oxide layer over the conductive
light-transmitting oxide layer, forming an anode having the conductive
light-transmitting oxide layer and the barrier layer, heating the anode
under a vacuum atmosphere, forming an electroluminescent layer over the
heated anode, and forming a cathode over the electroluminescent layer.
According to the techniques, the barrier layer is formed between the
electroluminescent layer and the conductive light-transmitting oxide
layer.