The present invention provides a ferromagnetic tunnel magnetoresistive film which is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage V.sub.1 applied to one of the tunnel junctions. By employing half-metallic ferromagnets 11 and 12 in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.