A magnetoresistive sensor having a self pinned structure formed above a free layer and having a pinning stabilization structure to avoid flipping of the magnetic moment of the pinned layer. The pinned layer stabilization structure includes hard magnetic structures formed over the leads in an area outside of the active area of the sensor, and a magnetic layer extends over the active area of the sensor and over the hard magnetic structures outside of the active area of the sensor.

 
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> Exchange coupling film and magnetoresistive element using the same

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