A programmable non-volatile memory device includes block switching logic that enables device-level translation rules to be changed. The device-level translation rules map the external addresses received by the flash memory device to the internal addresses of the programmable non-volatile memory device. Because the device-level translation rules are changeable, the physical location in the programmable non-volatile memory device to which an external address maps can be changed in a manner that is transparent to off-device operations. By allowing device-level translation rules to be changed, block management functions can be accomplished within the programmable non-volatile memory device itself.