A substrate processing method comprising steps for forming a copper film
on a surface of a substrate. These steps includes the step of filling a
first metal in the trenches so as to form a plated film of the first
metal on an entire surface of the substrate by electroplating, wherein
the electromagnetic field is adjusted by the virtual anode so that
differences of thickness of the plated film between the central portion
and the peripheral portion of the substrate being minimized, and
polishing and removing the plated film by pressing the substrate to the
polishing surface, wherein the pressures pressing the substrate to the
polishing surface at a central portion and a peripheral portion are
adjusted.