An improved method of forming a semiconductor device structure is
disclosed, comprising insertion of a semiconductor wafer into a
high-pressure heated chamber and the deposition of a low melting-point
aluminum material into a contact hole or via and over an insulating layer
overlying a substrate of the wafer. The wafer is heated up to the melting
point of the aluminum material and the chamber is pressurized to force
the aluminum material into the contact holes or vias and eliminate voids
present therein. A second layer of material, comprising a different metal
or alloy, which is used as a dopant source, is deposited over an outer
surface of the deposited aluminum material layer and allowed to diffuse
into the aluminum material layer in order to form a homogenous aluminum
alloy within the contact hole or via. A semiconductor device structure
made according to the method is also disclosed.