A method for fabricating a non-volatile memory device. The method includes
providing a substrate, e.g., silicon. The method also includes forming an
oxide layer overlying the substrate; and forming a buffer layer overlying
the oxide layer. A ferroelectric material is formed overlying the
substrate and is formed preferably overlying the buffer layer. The method
also includes forming a gate layer overlying the ferroelectric material,
where the gate layer is overlying a channel region. The method further
includes forming first source/drain region adjacent to a first side of
the channel region and a second source/drain region adjacent to a second
side of the channel region. In other embodiments, the method can also
include other steps.