A method including, in one embodiment, severing a sample at least partially from a substrate by cutting the substrate with a focused ion beam (FIB), capturing the substrate sample by activating a grasping element, and separating the captured sample from the substrate. The captured sample may be separated from the substrate and transported to an electron microscope for examination.

 
Web www.patentalert.com

> Strained-silicon CMOS device and method

~ 00353