A system and method are provided for reducing a rate for refreshing a portion of a dynamic random access memory (DRAM). The method includes storing a information for distinguishing between a first portion of a DRAM requiring refresh at a first rate and a second portion of said DRAM permitting refresh at a second rate lower than the first rate. The stored information is then accessed to refresh the first portion of the DRAM at the first rate and to refresh the second portion at the second rate. The information can be generated from post-fabrication stress testing such that most of the DRAM can be refreshed at the lower rate and only the portion requiring more frequent refresh is refreshed at the higher rate.

 
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> Memory device capable of performing high speed reading while realizing redundancy replacement

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