A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided. In one embodiment, an evaluation means for evaluating the critical dimension distribution of a plurality of circuit layouts formed on the wafer, the plurality of circuit layouts defined by a mask is provided. A logic operation is performed on the plurality of circuit layouts to extract the patterned feature. The patterned feature is compared with design rules and if there is a deviation or difference between the patterned feature and the design rules, this difference is compensated for by adjusting photolithography adjustable parameters, such as, for example, mask-making.