The present invention is directed to a multi-layer interconnection circuit module in which plural unit wiring layers are interlayer-connected to each other through a large number of via holes so that they are laminated and formed, wherein respective unit wiring layers (8) to (12) are adapted so that photo-lithographic processing is implemented to a first insulating layer (22) formed by photosensitive insulating resin material to form via hole grooves (25), and photo-lithographic processing is implemented to a second insulating layer (23) formed by photosensitive insulating resin material on the first insulating layer (22) to form wiring grooves (27). A conductive metal layer (24) is formed on the second insulating layer (23) in such a manner that conductive metal is filled within the via hole grooves (25) and the wiring grooves (27) to implement polishing processing to the conductive metal layer (24) until the principal surface of the second insulating layer (23) is exposed to form via holes (13) and wiring patterns (26) by the conductive metal filled within the via hole grooves (25) and the wiring grooves (27).

 
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> Power composite integrated semiconductor device and manufacturing method thereof

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