By utilizing a crystal pulling apparatus for producing a single crystal
according to the Czochralski method comprising at least a crucible to be
charged with a raw material, a heater surrounding the crucible, and
subsidiary heating means provided below the crucible, a single crystal is
pulled or the raw material is additionally introduced with heating by the
heater surrounding the crucible and the subsidiary heating means when the
amount of the raw material melt in the crucible becomes a limited amount.
Thus, there is provided a method for growing a single crystal at a high
yield while preventing solidification of melt raw material decreased to a
limited amount without affecting crystal quality, durability of crucible
or the like even when a crucible having a large diameter is used.