Systems and methods for etching operation management. A process controller acquires a line width on a processed wafer, determines a first Critical Dimension (CD) bias by subtracting the measured width from a target width, determines an adjusted target width by providing a first and a second etching duration, determines a second CD bias by providing the adjusted target width, determines third etching duration corresponding to the second CD bias, receives an event from an etching tool, and directs the etching tool to perform etching operations on an initiated wafer for the third etching duration.