A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive nanotube, and a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between a channel electrode and an output node. Input nodes of the first and second inverters are coupled to the set electrodes and the output nodes of the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or in a shadow memory or store mode to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode to transfer the state of the nanotube switching elements to the electronic memory.