A non-volatile memory system (230) includes a magnetoresistive random
access memory (MRAM) (232) including a plurality of magnetoresistive
memory cells, a floating-gate nonvolatile memory (234) including a
plurality of floating-gate memory cells, and a controller (236) coupled
to the MRAM (232) and to the floating-gate nonvolatile memory (234). The
controller (236) is adapted to be coupled to a system bus (220) and
controls a selected one of the MRAM (232) and the floating-gate
nonvolatile memory (234) in response to an access initiated from the
system bus (220).