A magnetic memory device includes a first write wiring which runs in a
first direction, a second write wiring which runs in a second direction
different from the first direction, and a magnetoresistive element which
is arranged at an intersection between the first and second write
wirings, has a fixed layer, a recording layer, and a magnetoresistive
layer sandwiched between the fixed layer and the recording layer, and has
an axis of easy magnetization obliquely with respect to the first and
second directions, the recording layer including a first ferromagnetic
layer, a second ferromagnetic layer, and a first nonmagnetic layer
sandwiched between the first and second ferromagnetic layers, in which
first magnetization of the first ferromagnetic layer and second
magnetization of the second ferromagnetic layer are ferromagnetically
coupled, and a ferro-coupling constant C of a ferromagnetic coupling is
0.0001 erg/cm.sup.2.ltoreq.C.ltoreq.0.2 erg/cm.sup.2.