A thin film structure comprises a first layer including a first plurality of grains of magnetic material having a first intergranular exchange coupling, and a second layer positioned adjacent to the first layer and including a second plurality of grains of magnetic material having a second intergranular exchange coupling, wherein the second intergranular exchange coupling is larger than the first intergranular exchange coupling and wherein the Curie temperature of the first layer is greater than the Curie temperature of the second layer. A data storage system including the thin film structure is also provided.