A dielectric device having excellent characteristics is provided. This
dielectric device comprises such a first electrode layer that constituent
elements located on its surface are terminated by halogen atoms and a
dielectric film formed on the surface of the first electrode layer
terminated by the halogen atoms. When the constituent elements for the
first electrode layer located on the surface thereof are terminated by
the halogen atoms in order to form a ferroelectric film having a bismuth
layer structure, therefore, Bi constituting the ferroelectric film is
inhibited from bonding to the constituent elements located on the surface
of the first electrode layer.