A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device: Bi.sub.4-xY.sub.xTi.sub.3O.sub.12 (I) wherein x is an integer of 0.1 to 2.