Provided is a chemical wet preparation method for Group 12-16 compound
semiconductor nanocrystals. The method includes mixing one or more Group
12 metals or Group 12 precursors with a dispersing agent and a solvent
followed by heating to obtain a Group 12 metal precursor solution;
dissolving one or more Group 16 elements or Group 16 precursors in a
coordinating solvent to obtain a Group 16 element precursor solution; and
mixing the Group 12 metal precursors solution and the Group 16 element
precursors solution to form a mixture, and then reacting the mixture to
grow the semiconductor nanocrystals. The Group 12-16 compound
semiconductor nanocrystals are stable and have high quantum efficiency
and uniform sizes and shapes.