Semiconductor devices and methods for fabricating the same. The semiconductor device includes a resistance-reduced transistor with metallized bilayer overlying source/drain regions and gate electrode thereof. A first dielectric layer with a conductive contact overlies the resistance-reduced transistor. A second dielectric layer having a first conductive feature overlies the first dielectric layer. A third dielectric layer with a second conductive feature overlies the second dielectric layer, forming a conductive pathway down to the top surface of the metallized bilayer over one of the source/drain regions or the gate electrode layer.