Provided are a vertical GaN-based LED and a method of manufacturing the
same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer
is formed under the n-electrode. An undoped GaN layer is formed under the
AlGaN layer to provide a two-dimensional electron gas layer to a junction
interface of the AlGaN layer. A GaN-based LED structure includes an
n-type GaN layer, an active layer, and a p-type GaN layer that are
sequentially formed under the undoped GaN layer. A p-electrode is formed
under the GaN-based LED structure. A conductive substrate is formed under
the p-electrode.