To store information in a ferroelectric material, a sample probe is used
to bring about mechanical action on individual domains and thereby to
cause a reversal of polarization in the individual domains, with
electrodes situated below the ferroelectric material being able to have a
bias applied to them to stabilize the change/reversal of polarization.
The reversal of polarization causes an alteration in the surface
topography of the ferroelectric material, and this alteration can be used
to read the information. The stored information is therefore obtained by
ascertaining the surface topography of the ferroelectric material. The
information is written and read using an AFM tip, with the tip being able
to be operated in contact or tapping mode for the purpose of writing, and
additionally in noncontact mode for the purpose of reading.