Techniques for reducing switching fields in semiconductor devices are provided. In one aspect, a semiconductor device comprising at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is provided. The semiconductor device is configured such that a thickness of at least one of the first magnetic layer and the second magnetic layer maintains a desired activation energy of the semiconductor device in the presence of an applied offsetting magnetic field. A method of reducing a switching field of a semiconductor device having at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is also provided.