A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.

 
Web www.patentalert.com

> Process for producing low reflection glass plate, and low reflection glass plate

~ 00381