A CMOS image sensor includes a photodiode in a semiconductor substrate; an insulating interlayer over the semiconductor substrate including the photodiode; a passivation layer pattern on the insulating interlayer corresponding to the photodiode; a first light-shielding layer pattern on the insulating interlayer between each passivation layer pattern; a second light-shielding layer pattern on the first light-shielding layer pattern; and at least one microlens on the passivation layer pattern.