There is provided a semiconductor memory device that can calculate an offset voltage of a bit line sense amplifier. The semiconductor memory device includes a cell array, an edge bit line sense amplifier for amplifying data of an edge cell array, and a power supply part for applying a predetermined voltage to the edge bit line sense amplifier. The power supply part includes a first power supply part for supplying a predetermined voltage to a bit line of the edge bit line sense amplifier and a second power supply part for supplying a predetermined voltage to a complementary bit line of the edge bit line sense amplifier.