PROBLEM To provide a high quality solid state image pickup device. SOLUTION Impurities are implanted into a semiconductor substrate to form vertical transfer channels for transferring electric charges in a first direction and to form a drain near each of the vertical transfer channels via a gate which forms a barrier. A first silicon oxide film, a silicon nitride film and a second silicon oxide film are deposited in this order from the bottom, on the surfaces of the vertical transfer channels, gates and drains. A first layer vertical transfer electrode is formed on the second silicon oxide film above the vertical transfer channel, and an insulating film if formed on the surface of the first layer vertical transfer electrode. The second silicon oxide film and silicon nitride film are etched in such a manner that the silicon nitride film covers the vertical transfer channel and extends above the gate excepting a portion near the drain. A gate control electrode is formed on the insulating film and first silicon oxide film. A plurality of charge accumulation regions are formed in a matrix shape in an area defined on an upstream side of the first direction further than the drains, in such a manner that each column of the charge accumulation regions is formed near each of the vertical transfer channels.