A target containing an indium oxide and a tin oxide is used and sputtered particles from the target are transported by a forced gas flow of a sputter gas onto an organic substrate and deposited on the organic substrate while applying a DC bias voltage or an RF bias voltage to the organic substrate. The organic substrate is close to the target so that it is positively acted on by plasma. Thus, an ITO transparent conductive film having a resistivity of 10.sup.-3 ohm.cm or less is formed on the organic substrate. The formed ITO transparent conductive film has a ratio of 1:1 or more and 4:1 or less between the peak intensity the (222) plane and the peak intensity of the (400) plane of the indium tin oxide in X-ray diffraction.