The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint signal by filtering the at least one endpoint signal, wherein the filtering comprises applying a Savitsky Golay filter (12) to the at least one endpoint signal; and determining (14) an endpoint of the etch process from the at least one filtered endpoint signal.

 
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