An abrasive liquid for CMP process characterized by comprising an abrasive
material, an aqueous solvent and an addition agent, and containing
abrasive particles having a particle diameter of 20 to 80 nm by 15 weight
% or more on the basis of the weight of the abrasive liquid; and a method
of polishing by using the abrasive liquid are appropriate for the
processing of flattening the surface of a device wafer on which at least
a silicon oxide film is formed, and take effect of being capable of
stably performing superior abrasive properties such as flattening
properties, low flaw properties and high washing properties, and then are
the most appropriate for the processing of flattening the surface of a
semiconductor device comprising a layer insulation film or an element
separation film, a magnetic head and a substrate for a liquid crystal
display in the semiconductor industry.