A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements includes selecting a first impurity element with a first atomic radius larger than an average host matrix atomic radius and selecting a second impurity element with a second atomic radius smaller than an average host matrix atomic radius. The methods and devices further include selecting amounts of each impurity element of the plurality of impurity elements wherein amounts and atomic radii of each of the plurality of impurity elements complement each other to reduce a host matrix lattice strain.