A compensation signal, which derives the mechanical stress, which acts on an integrated semiconductor circuit, from two partial compensation signals, which are generated by semiconductor elements with different stress characteristics, can be determined in more detail when the temperature dependence of a ratio of the partial compensation signals is also considered, wherein particularly a deviation of the ratio of the partial compensation signal to an ideal ratio is considered. Thereby, the rise in accuracy of the stress determination results from determining a deviation of the partial compensation signals, on which the stress determination is based, from a nominal behavior in a stress-free state, so that the deviation of the nominal behavior, which can be based, for example, on a variation of the process parameters in a production process of a semiconductor circuit, can also be considered, in addition to the known temperature behavior.