Memory elements including a first electrode and a second electrode. A chalcogenide material layer is between the first and second electrodes and a tin-chalcogenide layer is between the chalcogenide material layer and the second electrode. A selenide layer is between the tin-chalcogenide layer and the chalcogenide material layer. Optionally, a metal layer, for example a silver layer, is between the tin-chalcogenide layer and the second electrode. Methods for forming the memory elements are also provided.