There is provided a multi-port memory device, which is capable of
preventing a first high data fail phenomenon at an initial operation in a
current sensing type global data bus transmission/reception structure
without causing a problem in a low data transmission. In the multi-port
memory device having a data transmission/reception block (bank, port,
global data bus connection block, etc.) which exchanges data with the
global data bus in a current sensing type data transmission/reception
structure, an initialization switch is used to discharge each global data
bus line and an initialization signal generator controls the
initialization switch. A first high data fail at the initial operation is
caused by a high precharge level of the global data bus. According to the
present invention, it is possible to lower a high precharge level without
causing a problem in data transmission.