A method for processing a semiconductor substrate less than 200 .mu.m thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side of the substrate facing the chuck. During processing, an electrically conductive film, for example, made of metal, may be applied on the rear side of the substrate. The film may serve as electrical contact, heat sink or mechanical stabilizer.