A nonvolatile semiconductor memory device obtained by combining a nonvolatile memory device with a SRAM is provided to improve operating speed and reliability. The nonvolatile semiconductor memory device includes a plurality of data registers. Preferably, each of the plurality of data registers includes a pull-up driving unit adapted and configured to pull up a storage node, a pull-down driving unit adapted and configured to pull down the storage node, a data input/output unit adapted and configured to selectively input and output data between a bit line and the storage node depending on a voltage applied to a word line, and a data storing unit adapted and configured to store data of the storage node depending on a voltage applied to a top word line and a bottom word line or to output the stored data to the storage node.