A semiconductor structure and method for forming the same. The semiconductor structure comprises a field effect transistor (FET) having a channel region disposed between first and second source/drain (S/D) extension regions which are in turn in direct physical contact with first and second S/D regions, respective. First and second silicide regions are formed such that the first silicide region is in direct physical contact with the first S/D region and the first S/D extension region, whereas the second silicide region is in direct physical contact with the second S/D region and the second S/D extension region. The first silicide region is thinner for regions in contact with first S/D extension region than for regions in contact with the first S/D region. Similarly, the second silicide region is thinner for regions in contact with second S/D extension region than for regions in contact with the second S/D region.