A method for performing a liftoff operation involves printing a liftoff pattern using low-resolution patterning techniques to form fine feature patterns. The resulting feature size is defined by the spacing between printed patterns rather than the printed pattern size. By controlling the cross-sectional profile of the printed liftoff pattern, mask structures may be formed from the liftoff operation having beneficial etch-mask aperture profiles. For example, a multi-layer printed liftoff pattern can be used to create converging aperture profiles in a patterned layer. The patterned layer can then be used as an etch mask, where the converging aperture profiles result in desirable diverging etched features.