A technique is provided that is capable of employing raw materials having
no halogen, which has a high possibility of exerting a bad influence upon
semiconductor elements, thereby to easily form molybdenum films
(molybdenum silicide films or molybdenum nitride films) of which purity
is high at a low temperature.A film forming material for forming
molybdenum films, molybdenum silicide films, or tungasten nitride films
is provided, wherein a Mo source of said film is one or more chemical
compounds selected from the group consisting of a
hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a
hexadiethylaminodimolybdenum.