A dynamic sense amplifier for static random access memory (SRAM) is provided. The dynamic sense amplifier includes a pre-amplifier configured to amplify small input signals according to a first clock signal, and a main sense-latch coupled to the pre-amplifier, wherein the main sense-latch is configured to respond to the small input signals according to a second clock signal and a third clock signal, and wherein the dynamic sense amplifier is configured to consume substantially zero direct current power.